Title :
Leakage issues in failure analysis of p+ SiGe active area short monitor
Author :
Arya, A. ; Johnson, G.M. ; Ronsheim, P. ; Nxumalo, J. ; Molella, C.M. ; Murphy, Ryan J. ; Seung Chul Lee ; Daleo, C. ; Bum Ki Moon ; Onoda, Hiroshi ; Chung Woh Lai ; Shenzhi Yang ; Chow, Yew Tuck Clament ; Lee, Jeyull
Author_Institution :
Semicond. R&D Center, IBM, Bangalore, India
Abstract :
During technology development, leakage during inline or bench test of a p+ SiGe active areas short monitor structures may produce false short signal or hide real defect induced leakage. This paper investigates different sources of leakages - defects in SiGe, pressure due to tester probe on test pads, silicidation issues and boron P+ and arsenic N halo ion implants dose/energy. Some changes to mitigate the extraneous leakage are also presented in the paper.
Keywords :
Ge-Si alloys; arsenic; boron; crystal defects; failure analysis; leakage currents; semiconductor materials; SiGe:As; SiGe:B; defect induced leakage; failure analysis; ion implants; p+ SiGe active area short monitor; silicidation; Current measurement; Implants; Junctions; Metals; Monitoring; Probes; Silicon germanium;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992769
