Leakage issues in failure analysis of p+ SiGe active area short monitor

Author

Arya, A. ; Johnson, G.M. ; Ronsheim, P. ; Nxumalo, J. ; Molella, C.M. ; Murphy, Ryan J. ; Seung Chul Lee ; Daleo, C. ; Bum Ki Moon ; Onoda, Hiroshi ; Chung Woh Lai ; Shenzhi Yang ; Chow, Yew Tuck Clament ; Lee, Jeyull

Author_Institution

Semicond. R&D Center, IBM, Bangalore, India

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

4

Abstract

During technology development, leakage during inline or bench test of a p+ SiGe active areas short monitor structures may produce false short signal or hide real defect induced leakage. This paper investigates different sources of leakages - defects in SiGe, pressure due to tester probe on test pads, silicidation issues and boron P+ and arsenic N halo ion implants dose/energy. Some changes to mitigate the extraneous leakage are also presented in the paper.

Keywords

Ge-Si alloys; arsenic; boron; crystal defects; failure analysis; leakage currents; semiconductor materials; SiGe:As; SiGe:B; defect induced leakage; failure analysis; ion implants; p+ SiGe active area short monitor; silicidation; Current measurement; Implants; Junctions; Metals; Monitoring; Probes; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992769

Filename

5992769