• DocumentCode
    2877779
  • Title

    Reliability characteristics of cerium dioxide thin films

  • Author

    Chiu, Fu-Chien ; Chang, Shu-Hao ; Huang, Chih-Yao

  • Author_Institution
    Dept. of Electron. Eng., Ming-Chuan Univ., Taoyuan, Taiwan
  • fYear
    2011
  • fDate
    4-7 July 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The reliability characteristics of CeO2 thin films were studied. During stressing, stress-induced leakage current and charge trapping are dominant at low field and high field, respectively. The trap capture cross-sections are extracted to be around 5.7×10-19 cm2 and 3.5×10-14 cm2 in the event of “stressing” and “breakdown”, respectively.
  • Keywords
    cerium compounds; electric breakdown; electron traps; leakage currents; reliability; thin films; CeO2; breakdown; cerium dioxide thin films; charge trapping; reliability; stress-induced leakage current; stressing; Charge carrier processes; Current density; Dielectrics; Electric breakdown; Hafnium compounds; Reliability; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
  • Conference_Location
    Incheon
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4577-0159-7
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2011.5992770
  • Filename
    5992770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2877779