DocumentCode
2877854
Title
Positive bias temperature stress induced degradation in p-channel poly-Si thin-film transistors
Author
Lu, Xiaowei ; Wang, Mingxiang ; Wong, Man
Author_Institution
Dept. of Microelectron., Soochow Univ., Suzhou, China
fYear
2011
fDate
4-7 July 2011
Firstpage
1
Lastpage
4
Abstract
Positive bias temperature stress induced degradation in p-channel poly-Si thin-film transistors (TFTs) was systematically investigated. Two-stage degradation behavior is observed. The first-stage degradation is related to electron trapping via Fowler-Nordheim (F-N) tunnelling and de-trapping through Poole-Frenkel (P-F) emission. While the second-stage degradation is attributed to hydrogen related positive charge creation in the gate oxide.
Keywords
Poole-Frenkel effect; elemental semiconductors; silicon; thin film transistors; tunnelling; Fowler-Nordheim tunnelling; Poole-Frenkel emission; Si; electron trapping; gate oxide; p-channel polysilicon thin-film transistors; second-stage degradation; Degradation; Electron traps; Logic gates; Stress; Thin film transistors; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location
Incheon
ISSN
1946-1542
Print_ISBN
978-1-4577-0159-7
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2011.5992774
Filename
5992774
Link To Document