DocumentCode
2877928
Title
The study of InGaN SQW materials with Polarization Modulation SNOM
Author
Micheletto, Ruggero ; Yamada, Daisuke ; Kawakami, Yoichi ; Allegrini, Maria
Author_Institution
Kyoto Univ., Kyoto
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
We investigate on the photoluminescence spatial unhomogeneities of InGaN/GaN interface with a polarization modulation scanning near-field tunneling microscope. We could demonstrate for the first time nanometer sized domains that present polarization-changing properties.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light polarisation; near-field scanning optical microscopy; optical modulation; photoluminescence; wide band gap semiconductors; InGaN-GaN; SQW materials; near-field scanning optical microscopy; photoluminescence spatial unhomogeneities; polarization modulation SNOM; polarization modulation scanning near-field tunneling microscope; Carrier confinement; Crystalline materials; Filters; Gallium nitride; Laser beams; Microscopy; Optical polarization; Photoluminescence; Stimulated emission; Tunneling; 000.2170; 160.2540; 260.3800; 260.5430; 999.9999 (Near-field Optics);
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628640
Filename
4628640
Link To Document