Threshold voltage changed by floating gate control in electrolyte-insulator-semiconductor structure

Author

Kwon, Hyurk-Choon ; Yuan, Heng ; Yeom, Se-Hyuk ; Kang, Shin-Won

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

4

Abstract

A method for controlling the threshold voltage which has a significant problem in ion-sensitive transistors (IST) with floating gate structures was proposed in this study. Gated lateral pnp-type bipolar junction transistor (BJT) was used in our experiment and was immerged in ionic solution. The experiment results indicated that under a large negative gate bias condition, the threshold voltage can shift in normal state with specific bias. Moreover, we discussed the reasons for the changing phenomenon of threshold voltage in dielectric of gated lateral BJT in electrolyte.

Keywords

bipolar transistors; dielectric materials; electrolytes; ion sensitive field effect transistors; semiconductor-insulator boundaries; voltage control; BJT; dielectrics; electrolyte-insulator-semiconductor structure; floating gate control; floating gate structures; ion-sensitive transistors; ionic solution; negative gate bias; pnp-type bipolar junction transistor; threshold voltage control; Dielectrics; Electric potential; Electrodes; Logic gates; Silicon; Silicon compounds; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992783

Filename

5992783