• DocumentCode
    2878060
  • Title

    [Copyright notice]

  • fYear
    2010
  • fDate
    Sept. 28 2010-Oct. 1 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The following topics dealt with: rapid thermal process slip window; SiC stressor layers; laser crystallization; large single grain silicon; laser thermal annealing; thin SiGe channels; Ni-based silicide formation; thermal coefficient of electrical resistance; titanium silicide Schottky barriers; Cu(In,Ga)Se2 layer formation; selective emitter crystalline Si solar cell; nitric oxide rapid thermal nitridation; and doping.
  • Keywords
    Ge-Si alloys; copper compounds; crystallisation; elemental semiconductors; gallium compounds; indium compounds; laser beam annealing; nickel compounds; nitridation; rapid thermal annealing; semiconductor doping; silicon; silicon compounds; solar cells; ternary semiconductors; thermoelectricity; titanium compounds; wide band gap semiconductors; Ni-based silicide formation; doping; large single grain silicon; laser crystallization; laser thermal annealing; nitric oxide rapid thermal nitridation; rapid thermal process slip window; selective emitter crystalline solar cell; stressor layers; thermal coefficient of electrical resistance; titanium silicide Schottky barriers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on
  • Conference_Location
    Gainesville, FL
  • ISSN
    1944-0251
  • Print_ISBN
    978-1-4244-8400-3
  • Type

    conf

  • DOI
    10.1109/RTP.2010.5623608
  • Filename
    5623608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2878060