DocumentCode
2878062
Title
A new approach to the study of single bit failure mechanism in semiconductor devices
Author
Lee, Soon Ju ; Lee, Ju Hee ; Kim, Won ; Kim, Jong Hyeop ; Kim, Hyung Do ; Jang, Hee Chang ; Kim, Hyoung Ryeun ; Kim, Ho Joung
Author_Institution
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
fYear
2011
fDate
4-7 July 2011
Firstpage
1
Lastpage
4
Abstract
An investigation of open-contact failures in semiconductor devices is common issue. As we changed the cleaning condition of the contact, open failure happened. This contact has nitride in it and recess profile under it. To solve ambiguous fail mechanism we used various analysis methods. Especially, double XTEM sample image was the key and we confirmed the mechanism by reproducing experiment.
Keywords
failure analysis; semiconductor device reliability; transmission electron microscopy; double XTEM sample image; open-contact failures; semiconductor devices; single bit failure mechanism; Chemicals; Cleaning; Epitaxial growth; Filling; Nitrogen; Plugs; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location
Incheon
ISSN
1946-1542
Print_ISBN
978-1-4577-0159-7
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2011.5992784
Filename
5992784
Link To Document