Title :
A 4GHz 25mW GaAs IC using source coupled FET logic
Author :
Shimano, A. ; Katsu, S. ; Nambu, S. ; Kano, G.
Author_Institution :
Matsushita Semiconductor Laboratory, Osaka, Japan
Abstract :
A GaAs binary frequency divider with a 0.5μm gate, based on source-coupled FET logic, in which the FET threshold voltage can range from -0.9V to +0.2V, will be reported. Circuit has demonstrated 4GHz performance with 25mW power consumption.
Keywords :
Clocks; FET integrated circuits; Frequency conversion; Gallium arsenide; Gold; Inverters; Logic; MESFETs; Power dissipation; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1983.1156559
