• DocumentCode
    2878146
  • Title

    A 25ns 8K × 8b static MTL/I2L RAM

  • Author

    Wiedmann, S. ; Heuber, K.

  • Author_Institution
    IBM Laboratories, Boeblingen, Germany
  • Volume
    XXVI
  • fYear
    1983
  • fDate
    23-25 Feb. 1983
  • Firstpage
    110
  • Lastpage
    111
  • Abstract
    An experimental 8K×8 I2L/MTL static RAM with 25/50ns access/cycle will be described. The chip dissipates 8mW in standby and 210mW selected. Less than 1μW is required for data retention.
  • Keywords
    Differential amplifiers; Electron devices; Isolation technology; Random access memory; Read-write memory; Signal detection; Solid state circuits; Switches; Temperature distribution; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1983 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1983.1156563
  • Filename
    1156563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2878146