Non-destructive mechanical characterization of metal to metal bond interface for 3D-ICs

Author

Made, Riko I. ; Gan, Chee Lip

Author_Institution

Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

4-7 July 2011

Firstpage

1

Lastpage

6

Abstract

Mechanical testing on bonded processed wafers to assess their bond quality can be very costly, particularly on production wafers which have multilayer devices fabricated in the chips. A new non-destructive characterization method based on measured resonance frequency of the bond interface is proposed. Capacitive and resistive characteristics of the contact interface are amplified and utilized together with a designed external circuit that consists of an inductor and a resistor. This technique shows an improvement in measurement sensitivity to correlated mechanical adhesion strength, as compared to contact resistance measurement. It also eliminates stray resistances from line resistance and probing contact resistance.

Keywords

capacitance; electric resistance; electrical contacts; frequency measurement; integrated circuit metallisation; integrated circuit testing; mechanical testing; nondestructive testing; resonance; three-dimensional integrated circuits; wafer bonding; 3D IC; bond quality; bonded processed wafer; contact interface; mechanical adhesion strength; mechanical testing; metal to metal bond interface; nondestructive characterization method; nondestructive mechanical characterization; resonance frequency measurement; Contact resistance; Copper; Electrical resistance measurement; Frequency measurement; Resistance; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Conference_Location

Incheon

ISSN

1946-1542

Print_ISBN

978-1-4577-0159-7

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2011.5992797

Filename

5992797