A new volume integral formulation for fullwave extraction of 3-D circuits in inhomogeneous dielectrics exposed to external fields

A new first-principles based volume integral equation (VIE) formulation is developed for the broadband fullwave extraction of 3-D circuits, containing arbitrarily shaped lossy conductors with inhomogeneous dielectrics. It accentuates all the advantages of the VIE formulation traditionally developed for solving wave-related problems, while facilitating circuit parameter extraction such as impedance (Z)- and Scattering (S)-parameter extraction at ports located anywhere in the physical structure of a circuit. Its conformance to the wave-based VIE can also be utilized to analyze the performance of circuits exposed to external fields. An excellent agreement of numerical results with reference data validates the proposed formulation.