• DocumentCode
    2878327
  • Title

    Advanced failure analysis of memory devices

  • Author

    Li, Susan X.

  • Author_Institution
    Spansion, Inc., Sunnyvale, CA, USA
  • fYear
    2011
  • fDate
    4-7 July 2011
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    Throughout the computer era, the need for faster and denser memory devices has put constant pressure on memory manufacturers. The push to maximize memory capabilities has resulted in ever-changing technology. As a result, the failure analysis on advanced memory devices becomes increasingly challenging. In this paper, the author will first provide an overview of semiconductor memory devices based on their formation, functionality and applications. Then the main focus will be put on common failure analysis techniques and toolsets used for analyzing memory devices, particularly for Flash memory, SRAM and DRAM devices. More detailed discussion of Flash memory including its operation basics, specific failure modes and analysis results for these failures modes will be provided to demonstrate the daily usage of the tools and techniques. With current trends of making more complex memory devices in combination with other logic applications, memory devices are evolving from memory heavy to logic heavy devices. The difference in failure analysis requirements between memory and logic devices is getting smaller. Therefore, having good awareness of new developments in tools and techniques for both memory and logic devices will help the analysts stay ahead of the curve for the coming challenges in the foreseeable future.
  • Keywords
    DRAM chips; SRAM chips; failure analysis; flash memories; DRAM; Flash memory; SRAM; failure analysis; logic heavy devices; semiconductor memory devices; Failure analysis; Flash memory; Logic gates; Memory management; Nonvolatile memory; Random access memory; Read only memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
  • Conference_Location
    Incheon
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4577-0159-7
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2011.5992799
  • Filename
    5992799