Title :
Phase transformation of programmed NiSi electrical fuse: Diffusion, agglomeration and thermal stability
Author :
Park, Jongwoo ; Kang, Han-Byul ; Kim, Gun-Rae ; Kim, Min
Author_Institution :
Syst. LSI Div., Samsung Electron., Yongin, South Korea
Abstract :
An advanced CMOS technology process reliability qualification especially for the NiSi poly gated electrical fuse (eFuse) consists of electrical characterization, physical analyses and reliability evaluations. In this paper, insights are given on microstructural behaviors of the programmed NiSi poly gated eFuse induced by the high temperature storage (HTS) test. Both ex- and in-situ transmission electron microscopy (TEM) reveal that the improved post-resistance of the programmed eFuse is attributed to the low temperature growth of Ni3Si2 during HTS test at 250°C. In addition, the Ni agglomeration, the propensity of Ni3Si2 formation on the programmed eFuse with and without void appearance on the fuse link, is comprehensively investigated in conjunction with the eFuse reliability.
Keywords :
CMOS integrated circuits; electric fuses; high-temperature electronics; integrated circuit reliability; nickel compounds; semiconductor storage; thermal stability; transmission electron microscopy; CMOS technology process reliability qualification; NiSi; agglomeration; diffusion; eFuse; electrical characterization; high temperature storage test; phase transformation; physical analyses; poly gated electrical fuse; reliability evaluations; temperature 250 C; thermal stability; transmission electron microscopy; Anodes; Fuses; Heating; High temperature superconductors; Nickel; Programming; Reliability; Ni agglomeration; TEM; eFuse; electromigration; phase transformation; resistance;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the
Conference_Location :
Incheon
Print_ISBN :
978-1-4577-0159-7
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2011.5992800
