• DocumentCode
    2878407
  • Title

    Laser Dicing and Subsequent Die Strength Enhancement Technologies for Ultra-thin Wafer

  • Author

    Li, Jianhua ; Hwang, Hyeon ; Ahn, Eun-Chul ; Chen, Qiang ; Kim, Pyoungwan ; Lee, Teakhoon ; Chung, Myeongkee ; Chung, Taegyeong

  • Author_Institution
    Samsung Electron. Co. Ltd., Hwasung
  • fYear
    2007
  • fDate
    May 29 2007-June 1 2007
  • Firstpage
    761
  • Lastpage
    766
  • Abstract
    Current mechanical wafer dicing process adopting diamond grit shows advantages of low cost and high productivity. However, mechanical process for ultra-thin wafers would induce residual stress or mechanical damage, which can lead to wafer broken and die cracking. With the development of laser technology, laser precision micromachining has been employed for thin semiconductor wafer singulation, which shows advantages of no chipping, small kerf width, and high throughput over mechanical blade dicing. However, thermal damage to the chip induced by laser ablation results in die strength degradation. For ultra thin chip, low die strength tends to induce die crack in packaging process. Thus, thermal damage to the chip needs to be studied. In this study, first we made a comparison between mechanical blade sawing and laser ablation processes. Die strength and microstructure changes were studied by means of bending test and transmission electron microscope (TEM) analysis, respectively. Die strength results showed that the die strength obtained by laser dicing was far lower than that obtained by blade sawing. TEM analysis demonstrated that formation of microcracks and porosities in laser diced face, caused the die strength degradation. In addition, significant deviation between frontside and backside die strength was found in the laser micromachinned dies. The reason for this deviation was clarified as the defects density difference existing in top and bottom layer of the chip sidewalk Experiments results showed that the die strength obtained by laser dicing can not meet the demand of the packaging process. It tends to crack or fracture in the die attach or wire bonding process. Thus, it is essential to improve the die strength. Thus, in this investigation, etching processes including wet-etch and dry-etch were attempted to recover the die strength by removing the chip side wall damage. SEM and TEM images indicated that, before etching, the laser diced side walls were with ro- ugh surfaces, voids and microcracks. After etching, the surfaces got smooth and most of the voids and microcracks were removed. Chip strength measurement also verified the partial die strength recovery after etching process.
  • Keywords
    etching; integrated circuit packaging; laser ablation; laser beam machining; microcracks; transmission electron microscopy; die cracking; die strength enhancement; etching process; kerf width; laser dicing; mechanical damage; microcracks; micromachining; packaging process; residual stress; rough surfaces; transmission electron microscope; ultra-thin wafer; voids; Blades; Costs; Etching; Laser ablation; Packaging; Productivity; Residual stresses; Sawing; Scanning electron microscopy; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2007. ECTC '07. Proceedings. 57th
  • Conference_Location
    Reno, NV
  • ISSN
    0569-5503
  • Print_ISBN
    1-4244-0985-3
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2007.373883
  • Filename
    4249969