• DocumentCode
    2878642
  • Title

    A subnanosecond HEMT 1Kb SRAM

  • Author

    Nishiuchi, K. ; Kobayashi, Nao ; Kuroda, Sho ; Notomi, S. ; Nimura, Tomohiro ; Abe, Makoto ; Kobayashi, Masato

  • Author_Institution
    Fujitsu Labs., Ltd., Atsugi, Japan
  • Volume
    XXVII
  • fYear
    1984
  • fDate
    22-24 Feb. 1984
  • Firstpage
    48
  • Lastpage
    49
  • Keywords
    Capacitance; Gallium arsenide; HEMTs; Large scale integration; MODFETs; Random access memory; Read-write memory; Semiconductor device measurement; Size measurement; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1984.1156594
  • Filename
    1156594