DocumentCode :
2878642
Title :
A subnanosecond HEMT 1Kb SRAM
Author :
Nishiuchi, K. ; Kobayashi, Nao ; Kuroda, Sho ; Notomi, S. ; Nimura, Tomohiro ; Abe, Makoto ; Kobayashi, Masato
Author_Institution :
Fujitsu Labs., Ltd., Atsugi, Japan
Volume :
XXVII
fYear :
1984
fDate :
22-24 Feb. 1984
Firstpage :
48
Lastpage :
49
Keywords :
Capacitance; Gallium arsenide; HEMTs; Large scale integration; MODFETs; Random access memory; Read-write memory; Semiconductor device measurement; Size measurement; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1984.1156594
Filename :
1156594
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2878642
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