DocumentCode
2878642
Title
A subnanosecond HEMT 1Kb SRAM
Author
Nishiuchi, K. ; Kobayashi, Nao ; Kuroda, Sho ; Notomi, S. ; Nimura, Tomohiro ; Abe, Makoto ; Kobayashi, Masato
Author_Institution
Fujitsu Labs., Ltd., Atsugi, Japan
Volume
XXVII
fYear
1984
fDate
22-24 Feb. 1984
Firstpage
48
Lastpage
49
Keywords
Capacitance; Gallium arsenide; HEMTs; Large scale integration; MODFETs; Random access memory; Read-write memory; Semiconductor device measurement; Size measurement; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1984.1156594
Filename
1156594
Link To Document