Numerical modeling of graded band gap CIGS solar cells

Author

Gray, Jeffery L. ; Lee, Youn Jung

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

123

Abstract

The high efficiency reported by NREL for CIGS (Cu(In,Ga)Se₂) solar cells demonstrates the potential of band gap grading in producing high efficiency thin film solar cells. In order to reap the full benefits of this design strategy, a clear understanding of the fundamental device physics of these structures is needed. The purpose of this paper is to examine the role grading of the band gap plays in achieving high conversion efficiencies. To aid in this examination, a detailed numerical device simulation program, ADEPT, is used

Keywords

copper compounds; digital simulation; energy gap; indium compounds; power engineering computing; semiconductor device models; semiconductor materials; semiconductor thin films; simulation; solar cells; ternary semiconductors; (Cu(In,Ga)Se₂) solar cells; ADEPT; Cu(InGa)Se₂; graded band gap CIGS solar cells; high conversion efficiencies; high efficiency; numerical device simulation program; numerical modeling; thin film solar cells; Charge carrier processes; Computational Intelligence Society; Numerical models; Numerical simulation; Partial differential equations; Photonic band gap; Photovoltaic cells; Physics; Poisson equations; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519823

Filename

519823