Title :
Triple poly II DRAM memory cell
Author :
Yang, Kun ; Smits, K. ; Haq, E. ; Embrathiry, M. ; Varadi, A.
Author_Institution :
National Semicond. Corp., Santa Clara, CA, USA
Keywords :
Area measurement; Capacitors; Content addressable storage; Dielectric measurements; Random access memory; Size measurement; Testing;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156601
