DocumentCode
2878908
Title
Passi4: The next Technology for Passive Integration on Silicon
Author
den Dekker, A. ; van Geelen, A. ; van der Wel, P. ; Koster, R. ; Rodenburg, E.C.
Author_Institution
NXP Semicond., Nijmegen
fYear
2007
fDate
May 29 2007-June 1 2007
Firstpage
968
Lastpage
973
Abstract
A new technology for passive integration on silicon is presented. Accurate low density capacitors, high density capacitors, coils, resistors and trough wafer interconnect enable the realization of a highly miniaturized front-end module (FEM) for GSM without SMD´s. Partitioning of passives is optimized to achieve minimum size (6times6times1 mm3) and low cost at acceptable performance.
Keywords
capacitors; coils; passive networks; resistors; silicon; GSM; capacitors; coils; front-end module; resistors; silicon passive integration; wafer interconnects; Capacitors; Contacts; Dielectric substrates; GSM; Integrated circuit interconnections; Optimized production technology; Paramagnetic resonance; Radio frequency; Resistors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2007. ECTC '07. Proceedings. 57th
Conference_Location
Reno, NV
ISSN
0569-5503
Print_ISBN
1-4244-0985-3
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2007.373914
Filename
4250000
Link To Document