DocumentCode
2879015
Title
A power BiMOS with integral high current PNP transistor
Author
Bynum, B. ; Cave, D.
Author_Institution
Motorola, Inc., Tempe, AZ, USA
Volume
XXVII
fYear
1984
fDate
22-24 Feb. 1984
Firstpage
290
Lastpage
291
Abstract
The design of a driver IC featuring a power vertical PNP combined with bipolar/CMOS control circuitry will be discussed. Trqe circuit provides 1.0A output current with 0.5V input-output voltage and 25mA control current. It accepts 4.5 to 36V supply voltage with ±125V transients.
Keywords
Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Flexible printed circuits; High power amplifiers; Low voltage; Output feedback; Power supplies; Solid state circuits; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1984.1156617
Filename
1156617
Link To Document