Title :
A power BiMOS with integral high current PNP transistor
Author :
Bynum, B. ; Cave, D.
Author_Institution :
Motorola, Inc., Tempe, AZ, USA
Abstract :
The design of a driver IC featuring a power vertical PNP combined with bipolar/CMOS control circuitry will be discussed. Trqe circuit provides 1.0A output current with 0.5V input-output voltage and 25mA control current. It accepts 4.5 to 36V supply voltage with ±125V transients.
Keywords :
Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Flexible printed circuits; High power amplifiers; Low voltage; Output feedback; Power supplies; Solid state circuits; Switches;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156617
