DocumentCode :
2879293
Title :
Oxide confined vertical cavity laser - depleted optical thyristor
Author :
Choi, W.K. ; Kim, D.G. ; Choi, Y.W. ; Choquette, Kent D. ; Lee, S. ; Woo, D.H.
Author_Institution :
Sch. of Electr. & Electron. Eng., Chung-Ang Univ., Seoul
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
This study shows the optical properties of a vertical cavity laser(VCL) - depleted optical thyristor(DOT) fabricated using selective oxidation. The oxide confined PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics.
Keywords :
oxidation; photothyristors; semiconductor lasers; surface emitting lasers; depleted optical thyristor; lasing characteristic; nonlinear s-shaped current-voltage; oxide confined vertical cavity laser; selective oxidation; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical sensors; Oxidation; Stimulated emission; Surface emitting lasers; Threshold current; Thyristors; Vertical cavity surface emitting lasers; (250.7260) Vertical cavity surface emitting lasers; (250.7270) Vertical emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628719
Filename :
4628719
Link To Document :
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