DocumentCode :
2879318
Title :
The Damage Voltage Calculation of ESD based on Damage Parameters of Square wave
Author :
Yong-tao, LIN ; Zhi-liang, Tan ; Li-Gang
Author_Institution :
Key Lab. of Defense Sci. And Technol., Ordnance Eng. Coll.
fYear :
2006
fDate :
1-4 Aug. 2006
Firstpage :
293
Lastpage :
296
Abstract :
In the short pulse region, the knot surface breakdown is the chief damage that was induced by the electromagnetic pulse to the electronic devices. The power that leads the devices damaged relates with the pulse width. Electrostatic discharge (ESD) is a course with high electric potential and instantaneous large current, and ESD breakdown of the electronic devices is quite similar with it. According to the Wunch-Bell´s model theory that appraises pulse width threshold of semiconductor device, combining the human-body model (HBM) of ESD, the theoretical formula calculating damage threshold voltage of ESD was derivated. It provides one kind of method to estimate ESD damage threshold in the condition of lacked experimental data
Keywords :
electromagnetic pulse; electrostatic discharge; radiation effects; ESD; Wunch-Bell model; damage voltage calculation; electromagnetic pulse; electronic devices; electrostatic discharge; human-body model; square wave; Curve fitting; EMP radiation effects; Electric breakdown; Electrostatic discharge; Integrated circuit modeling; Laboratories; Power engineering and energy; Semiconductor devices; Space vector pulse width modulation; Threshold voltage; ESD; damage threshold Wunch-Bell model; electromagnetic pulse;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Environmental Electromagnetics, The 2006 4th Asia-Pacific Conference on
Conference_Location :
Dalian
Print_ISBN :
1-4244-0183-6
Type :
conf
DOI :
10.1109/CEEM.2006.257956
Filename :
4027288
Link To Document :
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