Title :
MOS imaging with random noise suppression
Author :
Ohba ; Nakai, Mitsuki ; Ando, Hideki ; Ozaki, Takashi ; Ozawa, Nobuki ; Imaide, T. ; Ikeda, Ken-ichi ; Suzuki, Takumi ; Takemoto, I. ; Masuhara, T.
Author_Institution :
Hitachi Central Res. Lab., Tokyo, Japan
Abstract :
This paper will describe an MOS imaging device that integrates a random noise suppression circuit which realizes a signal-to-noise ratio of 46dB at a scene illumination of 180 l (F 1.4) and smear noise of 69dB with no image lag.
Keywords :
Charge coupled devices; Circuit noise; Colored noise; Crosstalk; Inverters; Noise reduction; Phase noise; Photodiodes; Radio access networks; Signal to noise ratio;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156635
