Title :
GaAs heterojunction bipolar 1K gate array
Author :
Hen Yuan ; McLevige, W. ; Hung Shih ; Hearn, A.
Author_Institution :
Texas Instruments Central Res. Labs., Dallas, TX, USA
Abstract :
This report will discuss the design, fabrication and performance of a 1K heterojunction I2L gate array with a base bar size of 3.55 × 3.80mm2, containing 1024 internal gates, 64 programmable I/O buffers and 8 pads for the power supply. For general circuit applications the layout provides 300 global wire channels: 150 each in the horizontal and vertical directions.
Keywords :
Capacitance; Delay; Gallium arsenide; Heterojunctions; Integrated circuit technology; Isolation technology; Logic arrays; Logic gates; Voltage; Wire;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156638
