DocumentCode
2879727
Title
Analysis of microwave X-band HEMT limiters based on self-limiting effect
Author
Szczepaniak, Zenon R. ; Arvaniti, Andrzej
Author_Institution
Telecommun. Res. Inst., Warsaw, Poland
fYear
2004
fDate
8-9 Nov. 2004
Firstpage
19
Lastpage
22
Abstract
In this paper the self-limiting effect in microwave limiters using transistors with Schottky junction was investigated. The mathematical analysis how the input power detection influences on output power characteristic was presented. The analysis was done on the basis of the transistor IV curves. The calculations and measurement results of a realized limiter circuit was also presented.
Keywords
Schottky gate field effect transistors; high electron mobility transistors; microwave field effect transistors; microwave limiters; Schottky junction; high electron mobility transistor; mathematical analysis; microwave X-band HEMT limiters; microwave limiters circuit; self limiting effect; transistor current-voltage curves; Breakdown voltage; Frequency; HEMTs; Microwave measurements; Power generation; Signal analysis; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004. 12th International Symposium on
Print_ISBN
0-7803-8574-8
Type
conf
DOI
10.1109/EDMO.2004.1412393
Filename
1412393
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