DocumentCode :
2879744
Title :
Palladium Schottky diodes on ZnO thin films grown on GaAs
Author :
Weichsel, C. ; Pagni, O. ; Somhlahlo, N. ; van Wyk, E. ; Leitch, A.W.R.
Author_Institution :
Dept. of Phys., Port Elizabeth Univ., South Africa
fYear :
2004
fDate :
8-9 Nov. 2004
Firstpage :
23
Lastpage :
26
Abstract :
We present systematic studies of the current-voltage characteristics of palladium Schottky diodes on ZnO layers grown on GaAs and demonstrate the advantages of using GaAs as a substrate. In terms of possible applications of the Pd/ZnO/GaAs system for gas sensing devices, transparent electronics and optoelectronics we study the sensitivity of these devices to hydrogen gas and light.
Keywords :
II-VI semiconductors; III-V semiconductors; Schottky diodes; gallium arsenide; gas sensors; palladium; semiconductor thin films; sensitivity; wide band gap semiconductors; zinc compounds; GaAs substrate; Pd-ZnO-GaAs; Pd-ZnO-GaAs system; ZnO thin films; current-voltage curves; device sensitivity; gas sensing devices; hydrogen gas; hydrogen light; optoelectronics; palladium Schottky diodes; transparent electronics; Gallium arsenide; Gas detectors; Light emitting diodes; Lighting; Palladium; Schottky barriers; Schottky diodes; Substrates; Transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004. 12th International Symposium on
Print_ISBN :
0-7803-8574-8
Type :
conf
DOI :
10.1109/EDMO.2004.1412394
Filename :
1412394
Link To Document :
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