مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

2879746

Title :

Integrated 84ps ECL with I²L

Author :

Nakamura, T. ; Nakazato, Kazuo ; Miyazaki, Toshimasa ; Okabe, Toshiya ; Naga, M.

Author_Institution :

Hitachi Central Research Laboratory, Tokyo, Japan

Volume :

XXVII

fYear :

1984

fDate :

22-24 Feb. 1984

Firstpage :

152

Lastpage :

153

Abstract :

A side wall base contact structure used to fabricate 84ps ECL and 320ps I²L circuits with gate areas of 3500μm²and 112μm²will be covered.

Keywords :

Circuit testing; Coupling circuits; Delay; Doping; Electron devices; Etching; Iron; Semiconductor device measurement; Switching circuits; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International

Conference_Location :

San Francisco, CA, USA

Type :

conf

DOI :

10.1109/ISSCC.1984.1156658

Filename :

1156658

Link To Document :