• DocumentCode
    2879793
  • Title

    An 80ns 1Mb ROM

  • Author

    Masuoka, Fujio ; Ariizumi, S. ; Iwase, Takahiro ; Ono, M. ; Norio Endo

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    XXVII
  • fYear
    1984
  • fDate
    22-24 Feb. 1984
  • Firstpage
    146
  • Lastpage
    147
  • Abstract
    This paper will describe a 1Mb programmable ROM incorporating a through-hole programmed mask ROM cell and a CMOS fully static sense amp. The ROM has been fabricated using a double poly-Si P-well CMOS technology, achieving a cell size of 33μm2.
  • Keywords
    CMOS technology; Current supplies; Electronics packaging; Emergency power supplies; Negative feedback; Read only memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1984.1156660
  • Filename
    1156660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2879793