Title :
A nonlinear simulation model of integrated Hall devices in CMOS silicon technology
Author :
Schweda, Josef ; Riedling, Karl
Author_Institution :
Infineon Design Center, Villach, Austria
Abstract :
A new simulation model for Hall devices in CMOS silicon technology is proposed. Nonlinearities caused by effects, as back-bias and vertical field-effect, transient effects caused by parasitics and wide operational range in temperature were taken into account and implemented in VHDL-AMS. Behavioral equations and parameters are based in fundamental theory of Hall devices and semiconductor physics and verified experimentally. Comparisons between simulation and measured behavior of productive ICs were done to prove the correctness and completeness of the implemented set of equations and high accuracy of this model. To distinguish the benefits of the proposed model, simulations with the current Hall models are done with the same setups.
Keywords :
CMOS integrated circuits; Hall effect devices; circuit simulation; field effect integrated circuits; hardware description languages; integrated circuit design; integrated circuit modelling; CMOS silicon technology; VHDL-AMS; integrated Hall devices; integrated circuits; nonlinear simulation; semiconductor physics; CMOS technology; Charge carriers; Circuit simulation; Doping; Equations; Resistors; Semiconductor device modeling; Shape measurement; Silicon; Voltage;
Conference_Titel :
Behavioral Modeling and Simulation, 2002. BMAS 2002. Proceedings of the 2002 IEEE International Workshop on
Print_ISBN :
0-7803-7634-X
DOI :
10.1109/BMAS.2002.1291051
