DocumentCode
2879873
Title
256Kb CMNOS EPROM
Author
Ip, W.H ; Te-Long Chiu ; Tsung-Ching Wu ; Perlegos, G.
Author_Institution
SEEQ Technology, Inc., San Jose, CA
Volume
XXVII
fYear
1984
fDate
22-24 Feb. 1984
Firstpage
138
Lastpage
139
Abstract
A 125ns, 50mW 256Kb EPROM featuring 12V-16V programming will be described. The design utilizes a 1.5μm N-well CMOS on epi technology resulting In a cell size of 37.5μm2and a die size of 180 mil ×180 mil.
Keywords
CMOS technology; Circuits; Current supplies; Decoding; EPROM; Electric variables; Latches; Low voltage; Power dissipation; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1984.1156664
Filename
1156664
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