Author :
Rinerson, D. ; Ahrens, Markus ; Jih Lein ; Venkatesh, B. ; Tien Lin ; Song, Peter ; Longcor, S. ; Shen, L. ; Rogers, D. ; Briner, M.
Author_Institution :
Advanced Micro Devices, Sunnyvale, CA, USA
Abstract :
EPROMs utilizing double polysilicon floating gate technology that achieve bit densities through 64Kb to 512Kb and access times of 150ns will be reported. Through the use of an NMOS process with 1.7μm design rules, a minimum cell size of 36.6μm2has been obtained.
Keywords :
Circuits; Decoding; Delay lines; EPROM; Inorganic materials; Material storage; Nonvolatile memory; Read only memory; Secondary generated hot electron injection; Variable structure systems;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1984.1156665
