A high efficiency lateral light emitting device on SOI

The infrared light emission of lateral p⁺-p-n⁺ diodes realized on SIMOX-SOI (separation by implantation of oxygen - silicon on insulator) substrates has been studied. The confinement of the free carriers in one dimension due to the buried oxide was suggested to be a key point to increase the band-to-band recombination probability in silicon light emitters. We found in our devices an external quantum efficiency comparable to previous results presented in the literature. The wavelength range of the emission was found to be 900-1300 nm which is common for indirect band to band recombination in Si. The SOI technology incorporates an insulating layer between the thin single crystal silicon layer and the much thicker substrate. This electrically insulating layer is also a thermal isolator and so self-heating effects are common in devices fabricated on SOI wafers. Investigation of its influence on the light emission and the light distribution in the device has been carried out in our research. In this paper, the characteristics of the device with different active region lengths were investigated and explained quantitatively based on the recombination rate of carriers inside the active area by using the simulation model in Silvaco.