DocumentCode
2879938
Title
Nano-Scale Conductive Films with Low Temperature Sintering for High Performance Fine Pitch Interconnect
Author
Li, Yi ; Yim, Myung Jin ; Moon, Kyung Sik ; Wong, C.P.
Author_Institution
Georgia Inst. of Technol., Atlanta
fYear
2007
fDate
May 29 2007-June 1 2007
Firstpage
1350
Lastpage
1355
Abstract
In this paper, a novel nano-scale conductive film which combines the advantages of both traditional anisotropic conductive adhesives/films (ACAs/ACFs) and nonconductive adhesives/films (NCAs/NCFs) is introduced and developed for next generation high performance ultra-fine pitch packaging applications. This novel interconnect film possesses the properties of electrical conduction along the z-direction with relatively low bonding pressure (ACF-like) and the ultra-fine pitch (< 100 nm) capability (NCF-like). Unlike typical ACF which requires 1-5 vol% of conductive fillers, the novel nano-scale conductive film only needs less than 0.1 vol% conductive fillers to achieve good electrical conductance in the z direction. The nano-scale conductive film also allows a lower bonding pressure than NCF to achieve a much lower joint resistance (over two orders of magnitude lower than typical ACF joints) and higher current carrying capability. With low temperature sintering of nano-silver fillers, the joint resistance of the nano-scale conductive film could be as low as 10-5 Ohm, even lower than the NCF and lead-free solder joints. The insertion loss of nano-scale joints are almost the same as the standard ACF or NCF joints, suggesting that the nano-ACF joints are suitable for reliable high frequency adhesive joints in microelectronics packaging. The reliability of the nano-scale conductive film after high temperature and humidity test (85degC/85%RH) was also improved compared to the NCF joints. In order to reduce the silver migration and maintain a good insulation/dielectric property in the x-y plane for the nano-scale conductive film, self-assembled molecular wires (SAM) are used to passivate/protect the silver nano fillers. The protection of silver nano particles with molecular monolayers reduced the silver migration dramatically and no migration was observed upon application of high voltages (up to 500 V) due to the formation of surface chelating compounds between- the SAM and nano silver fillers. The migration behavior of SAM passivated nano-Ag conductive adhesives was investigated by analyzing the results with the migration model.
Keywords
conductive adhesives; dielectric properties; electrical conductivity; electromigration; fine-pitch technology; integrated circuit bonding; integrated circuit interconnections; monolayers; nanoparticles; passivation; reliability; self-assembly; silver; sintering; Ag; anisotropic conductive adhesives; bonding pressure; conductive fillers; dielectric property; electrical conduction; high performance fine pitch interconnect; high temperature test; humidity test; insertion loss; joint resistance; low temperature sintering; microelectronics packaging; migration behavior; molecular monolayers; nanoscale conductive films reliability; nonconductive films; passivation; self-assembled molecular wires; silver migration reduction; silver nanoparticles protection; surface chelating compounds formation; ultra-fine pitch packaging applications; Anisotropic conductive films; Anisotropic magnetoresistance; Bonding; Conductive adhesives; Conductive films; Electric resistance; Packaging; Protection; Silver; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2007. ECTC '07. Proceedings. 57th
Conference_Location
Reno, NV
ISSN
0569-5503
Print_ISBN
1-4244-0985-3
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2007.373970
Filename
4250056
Link To Document