• DocumentCode
    2880075
  • Title

    A single-chip high-voltage shallow-junction BORSHT-LSI

  • Author

    Ohno, Tetsufumi ; Sakurai, Takayasu ; Inabe, Y. ; Koinuma, T.

  • Author_Institution
    NTT Atsugi Electrical Comm. Lab., Kanagawa, Japan
  • Volume
    XXVII
  • fYear
    1984
  • fDate
    22-24 Feb. 1984
  • Firstpage
    230
  • Lastpage
    231
  • Abstract
    A single chip containing both the high and low voltage BORSHT functions will be discussed. The chip has a die area of 4.25mm×6.21mm, and was fabricated with 350V PNPN devices with shallow junctions and a dielectrically-isolated complementary bipolar technique.
  • Keywords
    Batteries; Feeds; Integrated circuit interconnections; Laboratories; Large scale integration; Protection; Subscriber loops; Switches; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1984 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1984.1156676
  • Filename
    1156676
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2880075