Title :
Fabricated the inclined-undercut structure in high efficiency InGaN-based light emitting diodes
Author :
Yang, Zhong-Jie ; Zheng, Jing-Hui ; Dai, Jing-Jie ; Lin, Chia-Feng
Author_Institution :
Dept. of Mater. Eng., Nat. Chung Hsing Univ., Taichung
Abstract :
The high efficiency InGaN-based light emitting diodes with an inclined-undercut mesa structures are fabricated through photoelectrochemical selective oxidation process at p-n interface and following crystallographic wet etching in molten KOH solution.
Keywords :
III-V semiconductors; etching; indium compounds; light emitting diodes; oxidation; wide band gap semiconductors; InGaN; crystallographic wet etching; high efficiency light emitting diodes; inclined undercut structure; inclined-undercut mesa structures; photoelectrochemical selective oxidation process; Crystallography; Gallium nitride; Light emitting diodes; Oxidation; Power generation; Quantum well devices; Rough surfaces; Surface emitting lasers; Surface roughness; Wet etching; (230.3670) Light-emitting diodes; (230.4000) Microstructure fabrication;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628794
