Title :
Design of a 2.1GHz GaAs low noise amplifier for CDMA RF front end
Author :
Di, Liu ; Yougang, Gao ; HuaDong, Huang
Author_Institution :
Sch. of Telecommun. Eng., Beijing Univ. of Posts & Telecommun.
Abstract :
On discussing GaAs process RF LNA performance of gain, unconditionally stability, noise figure, the design with EMC analysis of a 2.1 GHz low noise amplifier (LNA) implemented with GaAs technology is presented here. Simulation results show this LNA works well centered at 2.1 GHz frequency, with a 16 dB forward power gain (S21) and a noise figure (NF) less than 0.8 dB, also unconditionally stability
Keywords :
III-V semiconductors; UHF amplifiers; code division multiple access; electromagnetic compatibility; gallium arsenide; network synthesis; 16 dB; 2.1 GHz; CDMA RF front end; EMC analysis; GaAs; LNA; low noise amplifier; Electromagnetic compatibility; Gallium arsenide; Low-noise amplifiers; Multiaccess communication; Noise figure; Performance analysis; Performance gain; Radio frequency; Radiofrequency amplifiers; Stability analysis; ADS; CDMA; EMC; Low Noise Amplifier; RF; front end;
Conference_Titel :
Environmental Electromagnetics, The 2006 4th Asia-Pacific Conference on
Conference_Location :
Dalian
Print_ISBN :
1-4244-0183-6
DOI :
10.1109/CEEM.2006.258021
