Title :
Exciton spin relaxation in semiconductor quantum dots
Author :
Müller, T. ; Strasser, G. ; Unterrainer, K.
Author_Institution :
Inst. of Photonics & Center for Micro- & Nanostruct., Tech. Univ. Vienna, Vienna
Abstract :
The spin relaxation within the radiative doublet of the exciton ground state in InAs/GaAs quantum dots is studied via ultrafast spectral hole burning spectroscopy. A biexcitonic resonance emerges due to relaxation of the exciton spin.
Keywords :
III-V semiconductors; electron spin; excitons; gallium arsenide; ground states; high-speed optical techniques; indium compounds; semiconductor quantum dots; spectroscopy; InAs-GaAs; biexcitonic resonance; exciton ground state; exciton spin relaxation; radiative doublet; semiconductor quantum dots; ultrafast spectral hole burning spectroscopy; Excitons; Gallium arsenide; Performance evaluation; Polarization; Probes; Pulse measurements; Pulse shaping methods; Quantum dots; Spectroscopy; Stationary state; (300.6470) Spectroscopy, semiconductors; (320.7130) Ultrafast processes in condensed matter, including semiconductors; (320.7150) Ultrafast spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628822
