DocumentCode
2880984
Title
A 580 × 500-element CCD imager with a shallow flat P well
Author
Nagakawa, T. ; Miyatake, S. ; Kosaza, H. ; Misawa, K. ; Okuno, Masayuki ; Iikawa, K. ; Sakamoto, Shinji ; Matsui, O. ; Awane, K.
Author_Institution
Sharp Corp., Nara, Japan
Volume
XXVIII
fYear
1985
fDate
13-15 Feb. 1985
Firstpage
98
Lastpage
99
Abstract
This paper will discuss an interline-transfer CCD imager employing a shallow flat P-well that incorporates CCD shift registers, as well as photodiodes. Aperture ratio is 32% and a smear level of -70db has been obtained. In the unit cell, an N type substrate acts as an overflow drain for blooming suppression, while a single flat P-well is employed in the imaging area.
Keywords
Apertures; Charge coupled devices; Clocks; Electrons; Image resolution; Lighting; Operational amplifiers; Photodiodes; Solid state circuits; TV;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1985.1156728
Filename
1156728
Link To Document