• DocumentCode
    2881275
  • Title

    A 17ns 64K CMOS RAM with a schmitt trigger sense amplifier

  • Author

    Ochii, K. ; Yasuda, Hozumi ; Kobayashi, Kaoru ; Kondoh, T. ; Masuoka, Fujio

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • Volume
    XXVIII
  • fYear
    1985
  • fDate
    13-15 Feb. 1985
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    This paper will describe a CMOS SRAM using a four-transistor cross-coupled flip-flop memory cell with a high resistivity load composed of the second poly-Si. Cell is 12.5μm \\times 21.5\\mu m. Die is 3.86mm×6.99mm that can De packaged in a 300 mil wide 22 pin plastic DIP.
  • Keywords
    Aluminum; Decoding; Delay lines; Electronics packaging; Fluctuations; Impurities; Manufacturing; Power dissipation; Random access memory; Trigger circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1985.1156745
  • Filename
    1156745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2881275