DocumentCode :
2881327
Title :
Investigation of Ni-based silicide formation by different dynamic surface annealing approaches
Author :
He, Yonggen ; Wu, Bing ; Yu, Guobin ; Lin, Jin ; Zhang, Seanf ; Lu, Jiong-Ping ; Wu, Jingang ; Tang, Jiyue ; Zhao, Ganming
Author_Institution :
Technol. R&D center, Semicond. Manuf. Int. Corp., Shanghai, China
fYear :
2010
fDate :
Sept. 28 2010-Oct. 1 2010
Firstpage :
76
Lastpage :
78
Abstract :
Sub-melt millisecond anneal (MSA) is one of major anneal techniques for forming ultra-shallow and highly activated junctions. Besides post-implant anneal for source/drain and source/drain extensions, MSA has also attracted increased interests in nickel-silicide formation recently. During the silicidation process, desired Ni diffusion in forming silicides is competing with un-wanted Ni diffusion along defects paths. The latter will cause higher junction leakage and/or source/drain leakage. Since the activation energy for the un-wanted diffusion is lower, higher process temperature with shorter duration is beneficial for minimizing the un-wanted diffusion. Furthermore, MSA allows high process temperature to be used for silicide formation, which can re-activate some dopants, such as arsenic and phosphors. These dopants are easily deactivated during lower temperature thermal processes post source/drain formation such as silicide block film deposition; therefore, transistor performance can be improved by using MSA for silicidation processes. In this work, dynamic surface annealing (DSA), which is one form of MSA techniques, was applied to form Ni-based silicides. The impacts of different combinations of soak RTA and DSA for thermal steps before and after selective nickel/NiSi strip were examined. One step DSA has been demonstrated effective reduction of Nickel piping by e-beam inspection count, improved NiSi resistance and junction leakage w/o device performance degradation.
Keywords :
annealing; crystal defects; diffusion; electron beam effects; nickel; nickel compounds; thin films; Ni-NiSi; RTA; activation energy; arsenic; crystal defects; device performance degradation; diffusion; dynamic surface annealing; electron-beam inspection; high junction leakage; low temperature thermal processing; nickel piping; nickel-silicide formation; phosphors; silicidation processing; silicide block film deposition; source-drain extension; source-drain leakage; submelt millisecond annealing; transistor performance; Silicidation; Silicides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on
Conference_Location :
Gainesville, FL
ISSN :
1944-0251
Print_ISBN :
978-1-4244-8400-3
Type :
conf
DOI :
10.1109/RTP.2010.5623785
Filename :
5623785
Link To Document :
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