DocumentCode :
2881357
Title :
Optimization of implant and anneal processes
Author :
Prussin, S. ; Reyes, J. ; Onoda, H. ; Hamamoto, N. ; Nagayama, T. ; Tanjyo, M. ; Umisedo, S. ; Kawamura, Y. ; Hashimoto, M. ; Koga, Y. ; Maehara, N. ; Nakashima, Y. ; Yoshimi, H. ; Sezaki, S. ; Current, Michael
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
fYear :
2010
fDate :
Sept. 28 2010-Oct. 1 2010
Firstpage :
86
Lastpage :
89
Abstract :
A method of choosing a coupled pair of a doping process and an annealing process that is optimized on the basis of the Rs·xj figure of merit. Differential Hall effect evaluations are used to measure 1/μdef, the defect scatter contribution to the mobility. Supressing 1/μdef leads to optimization of the doping process-annealing process couple.
Keywords :
Hall effect; annealing; boron compounds; doping; ion implantation; ion mobility; BF2; Hall effect; annealing; doping process; ion implantation; ion mobility;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on
Conference_Location :
Gainesville, FL
ISSN :
1944-0251
Print_ISBN :
978-1-4244-8400-3
Type :
conf
DOI :
10.1109/RTP.2010.5623787
Filename :
5623787
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2881357
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