• DocumentCode
    2881357
  • Title

    Optimization of implant and anneal processes

  • Author

    Prussin, S. ; Reyes, J. ; Onoda, H. ; Hamamoto, N. ; Nagayama, T. ; Tanjyo, M. ; Umisedo, S. ; Kawamura, Y. ; Hashimoto, M. ; Koga, Y. ; Maehara, N. ; Nakashima, Y. ; Yoshimi, H. ; Sezaki, S. ; Current, Michael

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
  • fYear
    2010
  • fDate
    Sept. 28 2010-Oct. 1 2010
  • Firstpage
    86
  • Lastpage
    89
  • Abstract
    A method of choosing a coupled pair of a doping process and an annealing process that is optimized on the basis of the Rs·xj figure of merit. Differential Hall effect evaluations are used to measure 1/μdef, the defect scatter contribution to the mobility. Supressing 1/μdef leads to optimization of the doping process-annealing process couple.
  • Keywords
    Hall effect; annealing; boron compounds; doping; ion implantation; ion mobility; BF2; Hall effect; annealing; doping process; ion implantation; ion mobility;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on
  • Conference_Location
    Gainesville, FL
  • ISSN
    1944-0251
  • Print_ISBN
    978-1-4244-8400-3
  • Type

    conf

  • DOI
    10.1109/RTP.2010.5623787
  • Filename
    5623787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2881357