Title :
Research of Electro-Thermal Memory Effect of RF Power Amplifier based on LDMOS FET
Author :
Yong-sheng, Feng ; Yuan-An, Liu ; Jing-chang, Nan
Author_Institution :
Coll. of Telecommun. Eng., Beijing Univ. of Posts & Telecommun.
Abstract :
This paper clarifies the relation of junction temperature of FET and its dissipated power and the essential causation of electro-thermal memory effects due to theoretical analysis, taking the LDMOS RF power amplifier as an example. The impact of electro-thermal memory effect for the performance of RF power amplifier is analyzed by Agilent ADS simulation and measurement. And the method to reduce memory effect is educed on this basis
Keywords :
MOSFET; power amplifiers; radiofrequency amplifiers; LDMOS FET; RIF power amplifier; electro-thermal memory effect; Broadband amplifiers; Equivalent circuits; FETs; Heat sinks; Mathematical model; Packaging; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Temperature sensors; LDMOS; memory effect; power amplifier;
Conference_Titel :
Environmental Electromagnetics, The 2006 4th Asia-Pacific Conference on
Conference_Location :
Dalian
Print_ISBN :
1-4244-0183-6
DOI :
10.1109/CEEM.2006.258070
