DocumentCode :
2881459
Title :
A 3D model for simulating temperature and stress profiles during sub-millisecond laser spike annealing
Author :
Iyengar, Krishna A. ; Clancy, Paulette ; Thompson, Michael
Author_Institution :
Sch. of Theor. & Appl. Mech., Cornell Univ., Ithaca, NY, USA
fYear :
2010
fDate :
Sept. 28 2010-Oct. 1 2010
Firstpage :
90
Lastpage :
96
Abstract :
We present a physical based model for simulating the temperature and stress fields that incorporate full temperature and rate dependent thermal, optical and mechanical properties scanned laser spike annealing. We simulate the system in a 2D infinite line beam limit and a full 3D model including spatial variation of the laser intensity. These simulations accurately model effects of the finite laser beam size. Temperature profiles for narrow beam widths (3D) exhibit shorter tails and steeper gradients as compared to the 2D model. The impact of beam profiles and spatial fluctuations (noise) on the temperature uniformity is presented. Direct experimental measurements of temperature-time profiles from a narrow beam spike annealing system are used to calibrate and validate these models. The simulated thermal profiles were used as inputs in a finite element simulator (COMSOL) to determine the thermally induced stress fields. Resolved shear stress slip systems were determined as a function of anneal conditions (dwell and peak temperature).
Keywords :
finite element analysis; fluctuations; laser beam annealing; slip; thermal stresses; 2D infinite line beam limit; 2D model; 3D model; finite element simulation; finite laser beam size; mechanical properties; narrow beam spike annealing system; narrow beam width; optical properties; resolved shear stress slip system; scanned laser spike annealing; simulated thermal profile; spatial fluctuation; submillisecond laser spike annealing; temperature-time profile; thermal induced stress field; thermal properties; Annealing; Computational modeling; Heating; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on
Conference_Location :
Gainesville, FL
ISSN :
1944-0251
Print_ISBN :
978-1-4244-8400-3
Type :
conf
DOI :
10.1109/RTP.2010.5623792
Filename :
5623792
Link To Document :
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