Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization

We studied pulsed laser induced epitaxy of silicon using a seeding wafer to realize location-and orientation-control of silicon grain. Silicon grains as large as 4 μm × 4 μm with mostly the preferred (100) orientation area were obtained on top of contact openings through SiO₂ to seeding silicon (100) wafer. The orientation of the seed is inherited by a-Si during the solidification phase of molten-Si. The maximum process temperature of this process is 545°C which is for LPCVD deposition of a-Si. This layer is suitable for high mobility SOI CMOS devices which serve as building blocks for monolithic 3D integration.