Source/drain doping strategy vs. device performance

Shallow junction engineering drives the development of thermal processing manufacturing equipment. Junction depth and lateral source/drain extension doping profiles have an important impact on source/drain parasitic resistance and device short channel effects. These parameters were identified by ITRS as key processing steps. This work presents the result of a modeling study of lateral doping abruptness and its impact on device performance. The impact of lateral abruptness is examined from the point of view of on- and off-current, (I_on, I_off). I_on, I_off curves provide a way for complex comparing of device performance, including both power consumption and circuit performance (circuit delay). It is shown that threshold roll-off characteristics are degraded by a very abrupt lateral profile. The results of this study lead to the conclusion that benefits of the abrupt source/drain extension are overestimated.