DocumentCode
2881678
Title
A 20ns static column 1Mb DRAM in CMOS technology
Author
Sato, Kiminori ; Kawamoto, Hiroaki ; Yanagisawa, Kei ; Matsumoto, Tad ; Shimizu, Shogo ; Hori, R.
Author_Institution
Hitachi Device Development Center, Tokyo, Japan
Volume
XXVIII
fYear
1985
fDate
13-15 Feb. 1985
Firstpage
254
Lastpage
255
Keywords
CMOS technology; Capacitance; Circuits; Clocks; Electronics packaging; Energy consumption; Laboratories; Power dissipation; Random access memory; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1985.1156769
Filename
1156769
Link To Document