DocumentCode :
2881689
Title :
Probe diagnostics of RF plasmas for material processing
Author :
Godyak, V.
Author_Institution :
RF Plasma Consulting, Brookline, MA, USA
fYear :
2011
fDate :
26-30 June 2011
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given. Contemporary probe diagnostics of low pressure rf discharge plasmas implies the measurement of electron energy distribution function, EEDF and variety of plasma parameters found as the corresponding EEDF´s integrals. Such task is quite doable for laboratory plasma experiments in noble gases at a moderate rf power. The attempts to implement probe diagnostics (proved in the laboratory plasma) for diagnostics of chemically active plasma reactors are in many cases frustrating. This problem is not recognized when one just measures the probe I/V characteristic, since distorted and undistorted probe characteristics look similarly. But the problem becomes apparent after double differentiation of the distorted probe characteristics to infer the EEDF. There are three major problems in implementing of meaningful probe diagnostics in rf plasma reactors. They are: a) large frequency spectrum with significant amplitudes of the plasma rf potential corresponding to source and bias fundamental frequencies and their harmonics; b) contamination of the probe surface with a low conductive layer of the reaction products; and c) too high impedance between the plasma and grounded chamber due to the chamber contamination or/and an artificial protective coating. The way to address these problems and examples of EEDF measurements in different rf plasma reactors where these problems are successfully resolved are discussed in this presentation.
Keywords :
high-frequency discharges; plasma chemistry; plasma materials processing; plasma pressure; plasma probes; protective coatings; artificial protective coating layer; chemically active plasma reactor; distorted probe characteristics; double differentiation process; electron energy distribution function; grounded chamber contamination analysis; low conductive layer; low pressure rf discharge; material processing; plasma parameter; plasma rf potential; probe diagnostics; rf plasma diagnostics; Frequency measurement; Materials processing; Plasma measurements; Probes; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science (ICOPS), 2011 Abstracts IEEE International Conference on
Conference_Location :
Chicago, IL
ISSN :
0730-9244
Print_ISBN :
978-1-61284-330-8
Electronic_ISBN :
0730-9244
Type :
conf
DOI :
10.1109/PLASMA.2011.5993072
Filename :
5993072
Link To Document :
بازگشت