Title :
Hot-carrier suppressed VLSI with submicron geometry
Author :
Sakurai, T. ; Kakumu, M. ; Iizuka, Tetsuya
Author_Institution :
Semiconductor Device Engineering Lab, Toshiba Corporation, Kawasaki, Japan
Keywords :
Circuits; Degradation; Geometry; Hot carriers; Inverters; MOSFETs; Semiconductor device modeling; Substrates; Very large scale integration; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1985.1156771
