DocumentCode :
2881775
Title :
A 1Mb DRAM with 3-dimensional stacked capacitor cells
Author :
Takemae, Y. ; Ema, T. ; Nakano, M. ; Baba, F. ; Yabu, T. ; Miyasaka, K. ; Shirai, Keigo
Author_Institution :
Fujitsu, Ltd., Kawasaki, Japan
Volume :
XXVIII
fYear :
1985
fDate :
13-15 Feb. 1985
Firstpage :
250
Lastpage :
251
Keywords :
Assembly; Capacitance; Circuits; Electronics packaging; MOS capacitors; MOSFETs; Plastic packaging; Random access memory; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1985.1156775
Filename :
1156775
Link To Document :
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