A 1Mb DRAM with 3-dimensional stacked capacitor cells

Author

Takemae, Y. ; Ema, T. ; Nakano, M. ; Baba, F. ; Yabu, T. ; Miyasaka, K. ; Shirai, Keigo

Author_Institution

Fujitsu, Ltd., Kawasaki, Japan

Volume

XXVIII

fYear

1985

fDate

13-15 Feb. 1985

Firstpage

250

Lastpage

251

Keywords

Assembly; Capacitance; Circuits; Electronics packaging; MOS capacitors; MOSFETs; Plastic packaging; Random access memory; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International

Conference_Location

New York, NY, USA

Type

DOI

10.1109/ISSCC.1985.1156775

Filename

1156775

Link To Document