DocumentCode :
2881777
Title :
Process and RTP equipment design for Cu(In,Ga)Se2 layer formation using in-situ XRD techniques
Author :
Kötschau, I.M. ; Kampmann, A. ; Hahn, T. ; Hinze, J. ; Richter, E. ; Pursche, O. ; Gorse, S.
Author_Institution :
Centrotherm Photovoltaics AG, Blaubeuren, Germany
fYear :
2010
fDate :
Sept. 28 2010-Oct. 1 2010
Firstpage :
144
Lastpage :
144
Abstract :
Summary form only given. Centrotherm photovoltaics AG is one of the first turn-key supplier of fabrication lines for the production of whole Cu(In,Ga)Se<;sub>2<;/sub> (CIGS)-based thin-film modules of a size of ~1.5m2. The core-technologies for CIGS-absorber layer formation were developed in centrotherms research & development center in Blaubeuren (Germany) and represent a completely new approach, not reported in literature before. While the utilized sputter deposition of the Molybdenum back-contact and the Cu(Ga,In) metallic precursor stack is a well-proved and easy scalable deposition technique, the newly introduced techniques of an atmospheric Selenium-deposition and subsequent repid thermal processing in an atmospheric through-type furnace offer new perspectives for the economical success of CIGS-thin-film photovoltaics, since they overcome the scaling problems and long process times commonly associated with conventional PVD and vacuum-based techniques. Since these long process times are not compatible with the growing demand for cheaper photovoltaics, centrotherms CIGS-formation process was designed with a 60s cycle-time using rapid thermal processing techniques. For these unrivalled short process times, it is crucial to generate a profound knowledge about the phase formation and interdiffusion processes going on and, even more important, about the essential parameters determining the solid state reactions to ensure a complete process control. Against this background, centrotherm photovoltaics AG has set up, an unique laboratory-scale in-situ X-Ray diffraction (XRD) system allowing for the real-time investigation of phase formation processes. This device is build around a small rapid thermal processing (RTP) furnace, mapping centrotherms atmospheric ClGS-formation process to a laboratory scale. The contribution will report the systematic progress made in CIGSe RTP process design using this unique tool. The profound understanding - - gained trough such experimentation techniques flows directly into the design in state of the art high throughput manufacturing equipment.
Keywords :
X-ray diffraction; copper compounds; gallium compounds; indium compounds; rapid thermal processing; semiconductor thin films; sputter deposition; ternary semiconductors; CIGS-absorber layer; CIGS-thin-film photovoltaics; Cu(InGa)Se2; RTP equipment design; X-Ray diffraction; XRD; centrotherm photovoltaics; interdiffusion; phase formation; rapid thermal processing; sputter deposition; Photovoltaic systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on
Conference_Location :
Gainesville, FL
ISSN :
1944-0251
Print_ISBN :
978-1-4244-8400-3
Type :
conf
DOI :
10.1109/RTP.2010.5623809
Filename :
5623809
Link To Document :
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