Title :
A 1Mb CMOS DRAM with fast page and static column modes
Author :
Saito, Sakuyoshi ; Fujii, Shohei ; Okada, Yoshitaka ; Sawada, Syo ; Shinozaki, S. ; Natori, K. ; Ozawa, O.
Author_Institution :
Toshiba Semiconductor Device Engineering Lab, Kawasaki, Japan
Keywords :
CMOS process; Capacitors; Coupling circuits; Laboratories; Leakage current; Pulse circuits; Random access memory; Read-write memory; Semiconductor devices; Variable structure systems;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1985.1156776
