• DocumentCode
    2881782
  • Title

    A 1Mb CMOS DRAM with fast page and static column modes

  • Author

    Saito, Sakuyoshi ; Fujii, Shohei ; Okada, Yoshitaka ; Sawada, Syo ; Shinozaki, S. ; Natori, K. ; Ozawa, O.

  • Author_Institution
    Toshiba Semiconductor Device Engineering Lab, Kawasaki, Japan
  • Volume
    XXVIII
  • fYear
    1985
  • fDate
    13-15 Feb. 1985
  • Firstpage
    252
  • Lastpage
    253
  • Keywords
    CMOS process; Capacitors; Coupling circuits; Laboratories; Leakage current; Pulse circuits; Random access memory; Read-write memory; Semiconductor devices; Variable structure systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1985 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1985.1156776
  • Filename
    1156776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2881782